t4 - lds - 0 101, rev . 3 (12 1466) ?201 2 microsemi corporation page 1 of 9 2n 6 764 , 2n6766, 2n6768 and 2n6770 available on commercial versions n - channel mosfet qualified per mil - prf - 19500/ 54 3 qualified levels : jan, jantx , and jantxv description this family of 2n 67 64 , 2n6766, 2n6768 an d 2n 6 7 70 switching transistors are military qualified up to the jan txv level for high - reliability applications . these devices are also available in a thru hole to - 254aa leaded package . microsemi also offers numerous other transistor products to meet high er and lower power ratings with various switching speed requirements in both through - hole and surface - mount packages. to -20 4 a e ( to - 3 ) package also available in : to - 254aa package ( leaded ) 2n 67 64t1 & 2n 6 770t1 important: for the latest information, vis it our website http://www.microsemi.com . features ? jedec registered 2n 6764 , 2n6766, 2n6768 and 2n 6 7 70 number series. ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/ 543 . (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only). applications / benefits ? l ow - profile metal can design. ? military and other high - reliability applications. m axim um ratings @ t a = +25 oc unless otherwise stated msc ? law rence 6 lake street, lawrence, ma 01841 tel: 1 - 800- 446- 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc ? ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com p arameters / test conditions symbol value unit junction & storage temperature range t j & t stg - 55 to +150 c thermal resistance junction - to - case r ? jc 0.83 o c/w total power dissipation @ t a = +25 c @ t c = +25 c (1) p t 4 150 w drain - source voltage, dc 2n67 64 2n6766 2n6768 2n6770 v ds 100 200 400 500 v gate - source voltage, dc v gs 20 v drain current, dc @ t c = +25 oc ( 2 ) 2n6764 2n6766 2n6768 2n6770 i d1 38.0 30.0 14.0 12.0 a drain current, dc @ t c = +100 oc ( 2 ) 2n6764 2n6766 2n6768 2n6770 i d2 24.0 19.0 9.0 7.75 a off - state current (peak total value) ( 3 ) 2n6764 2n6766 2n6768 2n6770 i dm 152 120 56 48 a (pk) source current 2n6764 2n6766 2n676 8 2n6770 i s 38.0 30.0 14.0 12.0 a notes featured on next page.
t4 - lds - 0 101, rev . 3 (12 1466) ?201 2 microsemi corporation page 2 of 9 2n 6 764 , 2n6766, 2n6768 and 2n6770 notes: 1. derate linearly by 1.2 w/oc for t c > +25 oc . 2. the following formula derives the maximum theoretical i d limit. i d is limited by package and internal wires and may also be limited by pin diameter: 3. i dm = 4 x i d1 as calculated in note 2. mechanical and packaging ? case: to - 3 metal can. ? terminals: solder dipped (sn63/pb37) over nickel plated a lloy 52. rohs compliant matte - tin plating is also available on commercia l grad e only . ? marking: manufacturer's id, p art n umber, d ate c ode . ? weight: approximately 12.7 grams . ? see p ackage d imensions on last page. part nomenclature jan 2n 67 64 (e3) reliability level jan = jan level j antx = jantx level jantxv = jantxv level blank = commercial jedec type number (see electrical characteristic s table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c o mpliant symbols & definitions symbol definition di/dt rate of c hange of d iode c urrent while in reverse - recovery mode, recorded as maximum value. i f forward c urrent r g gate d rive i mpedance v dd drain s upply v oltage v ds drain s ource v oltage, dc v gs gate s ource v oltage, dc
t4 - lds - 0 101, rev . 3 (12 1466) ?201 2 microsemi corporation page 3 of 9 2n 6 764 , 2n6766, 2n6768 and 2n6770 electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit off character is tics drain - source breakdown voltage v gs = 0 v, i d = 1.0 ma 2n67 64 2n6766 2n676 8 2n67 70 v (br)dss 100 200 400 500 v gate - source voltage (threshold) v ds v gs , i d = 0.25 ma v ds v gs , i d = 0.25 ma, t j = +125 c v ds v gs , i d = 0.25 ma, t j = - 55 c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 v gate current v gs = 20 v, v ds = 0 v v gs = 20 v, v ds = 0 v, t j = +125 c i gss1 i gss2 100 200 na drain current v gs = 0 v, v ds = 80 v v gs = 0 v, v ds = 160 v v gs = 0 v, v ds = 320 v v gs = 0 v, v ds = 400 v 2n6764 2n6766 2n6768 2n6770 i dss1 25 a drain current v gs = 0 v, v ds = 100 v, t j = +125 c v gs = 0 v, v ds = 200 v, t j = +125 c v gs = 0 v, v ds = 400 v, t j = +125 c v gs = 0 v, v ds = 500 v, t j = +125 c 2n6764 2n6766 2n6768 2n6770 i dss2 1.0 ma drain current v gs = 0 v, v ds = 80 v, t j = +125 c v gs = 0 v, v ds = 160 v, t j = +125 c v gs = 0 v, v ds = 320 v, t j = +125 c v gs = 0 v, v ds = 400 v, t j = +125 c 2n6764 2n6766 2n6768 2n6770 i dss3 0.25 ma static drain - source on - state resistance v gs = 10 v, i d = 24.0 a pulsed v gs = 10 v, i d = 19.0 a pulsed v gs = 10 v, i d = 9.0 a pulsed v gs = 10 v, i d = 7.75 a pulsed 2n6764 2n6766 2n676 8 2n6770 r ds(on)1 0.055 0.085 0.3 0.4 ? static drain - source on - state resistance v gs = 10 v, i d = 38.0 a pulsed v gs = 10 v, i d = 30.0 a pulsed v gs = 10 v, i d = 14.0 a pulsed v gs = 10 v, i d = 12.0 a pulsed 2n6764 2n6766 2n6768 2n6770 r ds(on)2 0.065 0.09 0.4 0.5 ? static drain - source on - state resistance t j = +125 c v gs = 10 v, i d = 24.0 a pulsed v gs = 10 v, i d = 19.0 a pulsed v gs = 10 v, i d = 9.0 a pulsed v gs = 10 v, i d = 7.75 a pulsed 2n6764 2n6766 2n6768 2n6770 r ds(on)3 0.0 94 0.153 0.66 0.88 ? diode forward voltage v gs = 0 v, i d = 38.0 a pulsed v gs = 0 v, i d = 30.0 a pulsed v gs = 0 v, i d = 14.0 a pulsed v gs = 0 v, i d = 12.0 a pulsed 2n6764 2n6766 2n6768 2n6770 v sd 1.9 1.9 1.7 1.7 v
t4 - lds - 0 101, rev . 3 (12 1466) ?201 2 microsemi corporation page 4 of 9 2n 6 764 , 2n6766, 2n6768 and 2n6770 electrical characteristics @ t a = +25 c, unless otherwise noted (continued) dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on - state gate charge v gs = 10 v, i d = 38.0 a, v ds = 50 v v gs = 10 v, i d = 30.0 a, v ds = 10 0 v v gs = 10 v, i d = 14.0 a, v ds = 20 0 v v gs = 10 v, i d = 12.0 a, v ds = 2 50 v 2n6764 2n6766 2n6768 2n6770 q g(on) 125 115 110 120 nc gate to source charge v gs = 10 v, i d = 38.0 a, v ds = 50 v v gs = 10 v, i d = 30.0 a, v ds = 10 0 v v gs = 10 v, i d = 14.0 a, v ds = 20 0 v v gs = 10 v, i d = 12.0 a, v ds = 2 50 v 2n6764 2n6766 2n6768 2n6770 q gs 22 22 18 19 nc gate to drain charge v gs = 10 v, i d = 38.0 a, v ds = 50 v v gs = 10 v, i d = 30.0 a, v ds = 10 0 v v gs = 10 v, i d = 14.0 a, v ds = 20 0 v v gs = 10 v, i d = 12.0 a, v ds = 2 50 v 2n6764 2n6766 2n6768 2n6770 q gd 65 60 65 70 nc switching characteristics parameters / test conditions symbol min. max. unit turn - on delay time i d = 38.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 50 v i d = 30.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 100 v i d = 14.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 200 v i d = 12.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 250 v 2n6764 2n6766 2n6768 2n6770 t d(on) 35 ns ri se time i d = 38.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 50 v i d = 30.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 100 v i d = 14.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 200 v i d = 12.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 250 v 2n6764 2n6766 2n6768 2n6770 t r 190 ns turn - off delay time i d = 38.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 50 v i d = 30.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 100 v i d = 14.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 200 v i d = 12.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 250 v 2n6764 2n6766 2n6768 2n6770 t d(off) 170 ns fall time i d = 38.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 50 v i d = 30.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 100 v i d = 14.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 200 v i d = 12.0 a, v gs = 10 v, r g = 2 . 3 5 ? , v dd = 250 v 2n6764 2n6766 2n6768 2n6770 t f 130 ns diode reverse recovery time di/dt = 100 a/s, v dd 30 v, i d = 38.0 a di/dt = 100 a/s, v dd 30 v, i d = 30.0 a di/dt = 100 a/s, v dd 30 v, i d = 14.0 a di/dt = 100 a/s, v dd 30 v, i d = 12.0 a 2n6764 2n6766 2n6768 2n6770 t rr 500 950 1200 1600 ns
t4 - lds - 0 101, rev . 3 (12 1466) ?201 2 microsemi corporation page 5 of 9 2n 6 764 , 2n6766, 2n6768 and 2n6770 graphs t 1 , rectangle pulse duration (sec onds ) figure 1 thermal response curves thermal response (z jc )
t4 - lds - 0 101, rev . 3 (12 1466) ?201 2 microsemi corporation page 6 of 9 2n 6 764 , 2n6766, 2n6768 and 2n6770 graphs (continued) figure 2 ? maximum d rain c urrent vs c ase t emperature g raphs t c case temperature (oc) t c case t emperature (oc) for 2n67 64 for 2n67 66 t c case temperature (oc) t c case temperature (oc) for 2n6768 for 2n6770 i d drain current (amperes) i d drain current (amperes) i d drain current (amperes) i d drain current (amperes)
t4 - lds - 0 101, rev . 3 (12 1466) ?201 2 microsemi corporation page 7 of 9 2n 6 764 , 2n6766, 2n6768 and 2n6770 graphs (continu ed) figure 3 ? maximum s afe o perating a rea v ds , drain - to - source voltage (volts) for 2n6764 v ds , drain - to - source voltage (volts) for 2n6766 i d , drain current (amperes) i d , drain current (amperes)
t4 - lds - 0 101, rev . 3 (12 1466) ?201 2 microsemi corporation page 8 of 9 2n 6 764 , 2n6766, 2n6768 and 2n6770 graphs (continued) v ds , drain - to - source voltage (volts) for 2n6768 v ds , drain - to - source voltage ( volts) for 2n6770 i d drain current (amperes) i d drain current (amperes)
t4 - lds - 0 101, rev . 3 (12 1466) ?201 2 microsemi corporation page 9 of 9 2n 6 764 , 2n6766, 2n6768 and 2n6770 package dimensions note: 1. dimensions are in inches. 2. milli meters are given for general information only. 3. these dimensions should be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below the s eating plane. when gauge is not used measurement will be made at the seating plane. 4. the seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm) convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch (0.03 mm) concave to .006 inch (0.15 mm) conv ex overall. 5. these dimensions pertain to the 2n6764 and 2n6766 types. 6. these dimensions pertain to the 2n6768 and 2n6770 types . 7. mounting holes shall be deburred on the seating plane side. 8 . drain is electrically connected to the case. 9 . in accordance with asme y14.5m, diameters are equivalent to x symbology . schematic dim inches millimeters notes min max min max a - 0 .875 - 22.23 b 0 .060 0 .135 1.52 3.43 c 0 .250 0 . 36 0 6.35 9.1 5 d 0 .312 0 .500 7.92 12.70 d 2 - 0 .050 - 1.27 (3) e 0 .057 0 .038 0 .063 0 .043 1.45 0.97 1.60 1.10 dia. (5) dia. (6) f 0 .131 0 .188 3.33 4.78 r adius g 1.177 1.197 29.90 30.40 h 0 .655 0 .675 16.64 17.15 j 0 .205 0 .225 5.21 5.72 k 0 .420 0 .440 10.67 11.18 l 0 .495 0 .525 12.57 13.3 r adius m 0 .151 0 .16 1 3.84 4. 0 9 dia . (7)
|
